Surface Mount Schottky Barrier Rectifiers

REVERSE VOLTAGE: 20 --- 100 V CURRENT: 1.0 A FEATURES ◇ Plastic package has Underwriters Laborator Flammability Classification 94V-0 ◇ For surface mounted applications ◇ Low profile package ◇ Built-in strain relief ◇ Metal silicon junction, majority carrier conduction ◇ High surge capab

Surface Mount Schottky Barrier Rectifiers

REVERSE VOLTAGE: 20 --- 100 V CURRENT: 2.0 A Features ◇ Plastic package has Underwriters Laborator Flammability Classification 94V-0 ◇ For surface mounted applications ◇ Low profile package ◇ Built-in strain relief ◇ Metal silicon junction, majority carrier conduction ◇ High surge cap

Surface Mount Rectifiers

Features ◇ Low cost ◇ Low leakage ◇ Low forward voltage drop ◇ High current capability ◇ Easily cleaned with Alcohol,Isopropanol and similar solvents ◇ The plastic material carries U/L recognition 94V-0

Surface Mount Rectifiers

REVERSE VOLTAGE: 50 - 1000 V CURRENT: 1.0 A Features ◇ Glass passivated device ◇ Ideal for surface mouted applications ◇ Low leakage current ◇ Metallurgically bonded construction

Surface Mount Rectifiers

REVERSE VOLTAGE:1300-2000V CURRENT: 1.0 A Features ◇ Glass passivated device ◇ Ideal for surface mouted applications ◇ Low leakage current ◇ Metallurgically bonded construction

Surface Mount Rectifiers

Features ◇ Plastic package has underwriters laboratories flammability classification 94V-0 ◇ Glass passivated chip junction ◇ For surface mount applications ◇ High temperature metallurgically bonded construction ◇ Cavity-free glass passivated junction ◇ High temperature soldering guaranteed:

Surface Mount Rectifiers

Features ◇ Glass passivated device ◇ Ideal for surface mouted applications ◇ Low leakage current ◇ Metallurgically bonded construction

Surface Mount Rectifiers

VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A Features ◇ Plastic package has underwriters laboratories flammability classification 94V-0 ◇ Glass passivated chip junction ◇ For surface mount applications ◇ High temperature metallurgically bonded construction of 265℃ for 10 seconds in solder bath

Surface Mount Schottky Barrier Rectifiers

VOLTAGE RANGE: 20 --- 40 V CURRENT: 1.0 A Features ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection appli

DO-213AB MELF SMD Plastic Package

DO-213AB MELF SMD Plastic Package

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Rectifier Specialists

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Package Dimensions

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Packaging Information

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Fast Soft-Recovery Controlled Avalanche Rectifiers

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Amlifier Transistors (PNP)

Amplifier Transistors PNP Silicon

丝印代码：D213；DUAL CHANNEL SMALL OUTLINE OPTOISOLATOR TRANSISTOR OUTPUT

This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high density applications and eliminates the need for through–the–board moun

Germanium PNP Transistor High Power, High Gain Amplifier

Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment.

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

1024- 횞 512-pixel ccd image sensor

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