80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Backlighting  Power Management Functions  DC-DC Converters Features and Ben

80V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

丝印代码：HZ8；80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Backlighting  Power Management Functions  DC-DC Converters Features and Ben

丝印代码：HZ8；80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Backlighting  Power Management Functions  DC-DC Converters Features and Ben

80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits  Rated to +175°C – Ideal for High Ambient Temperature Environments  Low RDS(ON) – Ensures On-State Losses are Minimized  Excellent Qgd × RDS(ON) Product (FOM)  Advanced Technology for DC-DC Converters  Small Form Factor Thermally Efficient Package Enables Higher D

丝印代码：HZ8；80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits  Rated to +175°C – Ideal for High Ambient Temperature Environments  Low RDS(ON) – Ensures On-State Losses are Minimized  Excellent Qgd × RDS(ON) Product (FOM)  Advanced Technology for DC-DC Converters  Small Form Factor Thermally Efficient Package Enables Higher D

丝印代码：HZ8；80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits  Rated to +175°C – Ideal for High Ambient Temperature Environments  Low RDS(ON) – Ensures On-State Losses are Minimized  Excellent Qgd × RDS(ON) Product (FOM)  Advanced Technology for DC-DC Converters  Small Form Factor Thermally Efficient Package Enables Higher D

80V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Fast high-voltage soft-recovery controlled avalanche rectifiers

DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. FEATURES

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

Dual multiprotocol smart card coupler

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