位置:首页 > IC中文资料 > DMTH6010LPD
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DMTH6010LPD | 60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Engine Management Systems Body Control Electronics DC-DC Converters Feat | DIODES 美台半导体 | ||
DMTH6010LPD | 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES 美台半导体 | ||
DMTH6010LPD | 60V 175C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件:321.45 Kbytes Page:7 Pages | DIODES 美台半导体 | ||
60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Engine Management Systems Body Control Electronics DC-DC Converters Feat | DIODES 美台半导体 | |||
60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Engine Management Systems Body Control Electronics DC-DC Converters Feat | DIODES 美台半导体 | |||
60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Engine Management Systems Body Control Electronics DC-DC Converters Features and Benefits | DIODES 美台半导体 | |||
60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Engine Management Systems Body Control Electronics DC-DC Converters Features and Benefits | DIODES 美台半导体 | |||
60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Engine Management Systems Body Control Electronics DC-DC Converters Features and Benefits | DIODES 美台半导体 | |||
60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Engine management systems Body control electronics DC-DC converters Features and Benefits | DIODES 美台半导体 | |||
丝印代码:H6010LDW;60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Engine management systems Body control electronics DC-DC converters Features and Benefits | DIODES 美台半导体 | |||
60V 175C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件:321.45 Kbytes Page:7 Pages | DIODES 美台半导体 | |||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件:371.77 Kbytes Page:7 Pages | DIODES 美台半导体 | |||
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES 美台半导体 | |||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件:371.77 Kbytes Page:7 Pages | DIODES 美台半导体 | |||
60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES 美台半导体 | |||
VOLTAGE 50 to 1000 Volts CURRENT - P.C. MTG 3A , HEAT-SINK MTG 6A VOLTAGE 50 to 1000 Volts CURRENT - P.C. MTG 3A , HEAT-SINK MTG 6A FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. • Surge Overload Ratings to 125 Amperes. • Low forward voltage, and reverse leakage. • Small size , simple installation. | PANJIT 強茂 | |||
Fast Recovery Rectifier, 40A, 200ns Description: The NTE6006 through NTE6011 are fast recovery silicon rectifiers in a DO5 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference, sonar power supplies, and free wheeling diodes. A complete lin | NTE | |||
SCRs General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga | TECCOR | |||
SCRs 1-70 AMPS NON-SENSITIVE GATE Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip | TECCOR | |||
SCRs General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga | TECCOR |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Diodes Incorporated |
25+ |
N/A |
6843 |
样件支持,可原厂排单订货! |
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Diodes Incorporated |
25+ |
N/A |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
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DIODES/美台 |
2026+ |
POWERDI5060-8 |
54648 |
百分百原装现货 实单必成 |
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DIODES/美台 |
24+ |
N/A |
500000 |
美台原厂超低价支持 |
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DIODES/美台 |
25+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
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Diodes(美台) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Diodes |
22+ |
PowerDI50608 |
9000 |
原厂渠道,现货配单 |
|||
Diodes(美台) |
23+ |
标准封装 |
12000 |
正规渠道,只有原装! |
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DIODES 原盘原标 |
24+ |
DFN5X6-8 |
9000 |
只做原装正品 有挂有货 假一赔十 |
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DIODES/美台 |
2450+ |
SMD |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
DMTH6010LPD规格书下载地址
DMTH6010LPD参数引脚图相关
- F330
- f133
- f1212
- ex128
- et600
- ESD
- ep9315
- ep1c3t144c8n
- EMI滤波器
- em35
- EDA
- e251
- d类功放
- d触发器芯片
- d触发器
- dsp芯片
- dsp技术
- ds18b20
- ds1302
- dna芯片
- DMV-5W
- DMV56
- DMV-5
- DMV-3W
- DMV32
- DMV-30W
- DMV-30
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- DMV-20
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- DMV-15W
- DMV1500
- DMV-15
- DMV-12W
- DMV-10W
- DMV-10
- DMV-1
- DMTH6016LFDFWQ-13
- DMTH6016LFDFWQ
- DMTH6010SK3Q-13
- DMTH6010SK3Q
- DMTH6010SK3-13
- DMTH6010SK3
- DMTH6010SCT
- DMTH6010LPSQ-13
- DMTH6010LPSQ_18
- DMTH6010LPSQ
- DMTH6010LPS-13
- DMTH6010LPS_18
- DMTH6010LPS
- DMTH6010LPDWQ-13
- DMTH6010LPDWQ
- DMTH6010LPDQ-13
- DMTH6010LPDQ_V01
- DMTH6010LPDQ
- DMTH6010LPD-13
- DMTH6010LPD_V01
- DMTH6010LK3-TP
- DMTH6010LK3Q-13
- DMTH6010LK3Q
- DMTH6010LK3-13
- DMTH6010LK3
- DMTH6009LPS-13
- DMTH6009LPS
- DMTH6009LK3Q-13
- DMTH6009LK3Q
- DMTH6009LK3-13
- DMTH6009LK3
- DMTH6005LPSQ-13
- DMTH6005LPSQ_18
- DMTH6005LPSQ
- DMTH6005LPS-13
- DMTH6005LPS_18
- DMTH6005LPS
- DMTH6005LK3Q
- DMTH6005LK3
- DMTH6005LCT
- DMT3205
- DMT_18
- DMT_13
- DMS-XX
- DMS-LM3
- DMS-LM2
- DMS-EB2
- DMS-EB
- DMS30PC
- DMS30DR
- DMS-20
- DMS20
- DMS1615
- DMS-05V
- DMRGR
- DMRBU
- DMRBA
- DMR76C
- DMR76A
- DMR57C
DMTH6010LPD数据表相关新闻
DMTH6005LFG-13
进口代理
2022-8-5DMTH6016LFVWQ-7
DMTH6016LFVWQ-7
2022-8-2DN2540N8-G 原装正品现货 场效应管 MICROCHIP/微芯
支持实单 价格优势 有单必成
2022-3-31DN2540N8-G 原装正品现货
支持实单 价格优势 有单必成
2022-3-30DMTH6005LK3Q-13
DMTH6005LK3Q-13
2021-11-15DMS3R3224R
属性 参数值 商品目录 超级电容器 容值 220mF 精度 -20%~+80%_ 额定电压 3.3V 工作温度 -10℃ ~ +60℃
2020-11-9
DdatasheetPDF页码索引
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