40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET

文件：515.039 Kbytes Page：7 Pages

40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET

文件：515.039 Kbytes Page：7 Pages

Dual complementary pair and inverter

DESCRIPTION The HEF4007UB is a dual complementary pair and an inverter with access to each device. It has three n-channel and three p-channel enhancement mode MOS transistors. APPLICATION INFORMATION Some examples of applications for the HEF4007UB are: • High input impedance amplifiers • Li

Dual complementary pair and inverter

DESCRIPTION The HEF4007UB is a dual complementary pair and an inverter with access to each device. It has three n-channel and three p-channel enhancement mode MOS transistors. APPLICATION INFORMATION Some examples of applications for the HEF4007UB are: • High input impedance amplifiers • Li

Dual complementary pair and inverter

DESCRIPTION The HEF4007UB is a dual complementary pair and an inverter with access to each device. It has three n-channel and three p-channel enhancement mode MOS transistors. APPLICATION INFORMATION Some examples of applications for the HEF4007UB are: • High input impedance amplifiers • Li

Dual complementary pair and inverter

DESCRIPTION The HEF4007UB is a dual complementary pair and an inverter with access to each device. It has three n-channel and three p-channel enhancement mode MOS transistors. APPLICATION INFORMATION Some examples of applications for the HEF4007UB are: • High input impedance amplifiers • Li

GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere)

FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound ● Glass passivated junction version of PG4001S thru PG4007S in A-405 package ● 1 ampere operation at TA=75 ¢J with no thermal runaway ● Exceeds environmenta