ASYMMETRIC DUAL N-CHANNEL MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for highefficiency power-management applications. Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output L

ASYMMETRIC DUAL N-CHANNEL MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for highefficiency power-management applications. Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output L

ASYMMETRIC DUAL N-CHANNEL MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for highefficiency power-management applications. Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output L

1ch 300mA CMOS LDO Regulators

General Description BHxxM0A series are high-performance CMOS LDO regulators with output current ability of up to 300mA. These devices have excellent noise characteristics despite of their low circuit current consumption of 65μA. They are most appropriate for various applications such as power

1ch 300mA CMOS LDO Regulators

General Description BHxxM0A series are high-performance CMOS LDO regulators with output current ability of up to 300mA. These devices have excellent noise characteristics despite of their low circuit current consumption of 65μA. They are most appropriate for various applications such as power

1ch 300mA CMOS LDO Regulators

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