DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Dual P-Channel MOSFET • Low On-Resistance • Low Gate Threshold

Dual P-CHANNEL ENHANCEMENT MODE MOSFET

Dual P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switches

DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Dual P-Channel MOSFET • Low On-Resistance • Low Gate Threshold

DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Dual P-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltag

DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Dual P-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltag

DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：230.98 Kbytes Page：5 Pages

DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

0.3??Single Digit Numeric Display, Seven Segment, Common Cathode

Description: The NTE3056 through NTE3060 are 0.3 inch (7.62mm) height single digit, seven segment, common cathode displays. The NTE3056 and NTE3057 utilize LED chips which are made from GaAsP on a GaAs substrate. The NTE3059 utilizes LED chips which are made from GaP on a transparent GaP substrat

Silicon planer type

文件：19.62 Kbytes Page：1 Pages

Silicon planer type

文件：19.62 Kbytes Page：1 Pages