DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual P-Channel MOSFET • Low On-Resistance • 150 mΩ @ VGS = -4.5V • 200 mΩ @ VGS = -2.5V • 240 mΩ @ VGS = -1.8V • Very Low Gate Threshold Voltage VGS(th) ≤ 1V • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant

Dual P-CHANNEL ENHANCEMENT MODE MOSFET

DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual P-Channel MOSFET • Low On-Resistance • 150 mΩ @ VGS = -4.5V • 200 mΩ @ VGS = -2.5V • 240 mΩ @ VGS = -1.8V • Very Low Gate Threshold Voltage VGS(th) ≤ 1V • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant

DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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3-step charge control with current detection as charge termination Universal input voltage (90-264 VAC) 2-pin IEC 320 mains connector Waterproof (IP67) version available Approvals: - Medically certified Safety: EN 60601-1 ed. 3.1 Home healthcare EN 60601-1-11 EMC: EN 60601-1-2 ed. 4 - UL

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