P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low RDS(ON) ◾ 72 mΩ @VGS = -4.5V ◾ 108 mΩ @VGS = -2.7V ◾ 123 mΩ @VGS = -2.5V • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Relia

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low RDS(ON): • 72 mΩ @VGS = -4.5V • 108 mΩ @VGS = -2.7V • 123 mΩ @VGS = -2.5V • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • Green Device (Note 4)

P-Channel Mosfet

Application «+ Load/Power Switching «Interfacing Switching * Logic Level Shift

P-CHANNEL ENHANCEMENT MODE MOSFET

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low RDS(ON) ◾ 72 mΩ @VGS = -4.5V ◾ 108 mΩ @VGS = -2.7V ◾ 123 mΩ @VGS = -2.5V • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Relia

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low RDS(ON) - 72mΩ @VGS = -4.5V - 108mΩ @VGS = -2.7V - 123mΩ @VGS = -2.5V • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliabil

-20V P-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology DMP2123LQ General Features VDS = -20V ID =-2.3A RDS(ON)

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low RDS(ON) - 72mΩ @VGS = -4.5V - 108mΩ @VGS = -2.7V - 123mΩ @VGS = -2.5V • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliabil

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low RDS(ON) - 72mΩ @VGS = -4.5V - 108mΩ @VGS = -2.7V - 123mΩ @VGS = -2.5V • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliabil

20V P-CHANNEL ENHANCEMENT MODE MOSFET

Fast Ethernet Cat5e Data Double-Ended Cordset

Product Description Fast Ethernet Cat5e Data Double-Ended Cordset: Male straight RJ45-coded black RJ45 Field Attachable to male straight RJ45-coded black RJ45 Field Attachable, shielded, 30 V AC / 42 V DC, 1.5 A; TPE green cable, 4-wires, 0.38 mm²

HEX MALE/FEMALE STANDOFFS

[KEYSTONE] MALE/FEMALE THREADED STANDOFFS PC 104 MOUNTING KITS NYLON STANDOFFS

MALE/FEMALE THREADED STANDOFFS

[KEYSTONE] MALE/FEMALE THREADED STANDOFFS PC 104 MOUNTING KITS NYLON STANDOFFS

Snap Bushings

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Inductor

文件：19.82 Kbytes Page：1 Pages