P-CHANNEL ENHANCEMENT MODE MOSFET

文件：178.86 Kbytes Page：5 Pages

P-CHANNEL ENHANCEMENT MODE MOSFET

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：131.64 Kbytes Page：5 Pages

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：131.64 Kbytes Page：5 Pages

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：178.86 Kbytes Page：5 Pages

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：131.64 Kbytes Page：5 Pages

10-16GHz Low Noise Amplifier

Description The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features • Broad band performance 10-16GHz • 2.

10-16GHz Self biased Low Noise Amplifier

Description The monolithic microwave IC (MMIC) in the package is a two-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

RF AMPLIFIER FOR DIGITAL SERVO CD STSTEM

RF AMPLIFIER FOR DIGITAL SERVO CD STSTEM TA2066F is a 3-beam type PUH compatible RF Amplifier to be used in the CD system. In combination with a CMOS single chip processor TC9295F / TC9296F / TC9405F / TC9406F, a CD system can be composed very simply.

RF AMPLIFIER FOR DIGITAL SERVO CD STSTEM

RF AMPLIFIER FOR DIGITAL SERVO CD STSTEM TA2066F is a 3-beam type PUH compatible RF Amplifier to be used in the CD system. In combination with a CMOS single chip processor TC9295F / TC9296F / TC9405F / TC9406F, a CD system can be composed very simply.

50V - 1.5A QUAD DARLINGTON SWITCHES

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