10-16GHz Low Noise Amplifier

Description The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features • Broad band performance 10-16GHz • 2.

10-16GHz Low Noise Amplifier

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10-16GHz Low Noise Amplifier

文件：156.5 Kbytes Page：8 Pages

10-16GHz Low Noise Amplifier

Description The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features • Broad band performance 10-16GHz • 2.

10-16GHz Low Noise Amplifier

Description The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features • Broad band performance 10-16GHz • 2.

10-16GHz Low Noise Amplifier

Description The CHA2066-QAG is a two-stage wide band monolithic low noise amplifier. Typical applications range from telecommunication (point to point, point to multi-point, VSAT) to ISM and military markets. Main Features ■ Broadband performance 10-16GHz ■ 2.5dB noise figure, 10-16GHz (BD) ■

10-16GHz Self biased Low Noise Amplifier

Description The monolithic microwave IC (MMIC) in the package is a two-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

10-16GHz Self biased Low Noise Amplifier

Description The monolithic microwave IC (MMIC) in the package is a two-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

10-16GHz Self biased Low Noise Amplifier

Description The monolithic microwave IC (MMIC) in the package is a two-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

10-16GHz Low Noise Amplifier

文件：117.8 Kbytes Page：8 Pages

10-16GHz Low Noise Amplifier

文件：156.5 Kbytes Page：8 Pages

10-16GHz Low Noise Amplifier

文件：117.8 Kbytes Page：8 Pages

10-16GHz Low Noise Amplifier

文件：117.8 Kbytes Page：8 Pages

GaAs Monolithic Microwave IC in SMD leadless package

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GaAs Monolithic Microwave IC in SMD leadless package

文件：211.49 Kbytes Page：12 Pages

Fast Ethernet Cat5e Data Double-Ended Cordset: Male straight D-coded

Product Description Fast Ethernet Cat5e Data Double-Ended Cordset: Male straight D-coded black M12 Standard to male straight D-coded black M12 Standard, shielded, 50 V AC / 60 V DC, 4 A; TPE green cable, 4-wires, 0.38 mm²

10 TO 2000 MHz TO-8 CASCADABLE AMPLIFIER

Typical Values AC2066 High Gain - Two Stages. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.0 dB High Output Level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +15.0 dBm

Snap Bushings

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ADSL MICRO FILTER

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TO-8B CASCADABLE AMPLIFIER

文件：173.61 Kbytes Page：2 Pages