10-16GHz Low Noise Amplifier

Description The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features • Broad band performance 10-16GHz • 2.

10-16GHz Low Noise Amplifier

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10-16GHz Low Noise Amplifier

文件：156.5 Kbytes Page：8 Pages

10-16GHz Low Noise Amplifier

10-16GHz Low Noise Amplifier

Description The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features • Broad band performance 10-16GHz • 2.

10-16GHz Low Noise Amplifier

Description The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features • Broad band performance 10-16GHz • 2.

10-16GHz Low Noise Amplifier

Description The CHA2066-QAG is a two-stage wide band monolithic low noise amplifier. Typical applications range from telecommunication (point to point, point to multi-point, VSAT) to ISM and military markets. Main Features ■ Broadband performance 10-16GHz ■ 2.5dB noise figure, 10-16GHz (BD) ■

10-16GHz Self biased Low Noise Amplifier

Description The monolithic microwave IC (MMIC) in the package is a two-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

10-16GHz Self biased Low Noise Amplifier

Description The monolithic microwave IC (MMIC) in the package is a two-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

10-16GHz Self biased Low Noise Amplifier

Description The monolithic microwave IC (MMIC) in the package is a two-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

10-16GHz Low Noise Amplifier

文件：117.8 Kbytes Page：8 Pages

10-16GHz Low Noise Amplifier

文件：156.5 Kbytes Page：8 Pages

10-16GHz Low Noise Amplifier

文件：117.8 Kbytes Page：8 Pages

10-16GHz Low Noise Amplifier

文件：117.8 Kbytes Page：8 Pages

GaAs Monolithic Microwave IC in SMD leadless package

文件：211.49 Kbytes Page：12 Pages

10-16GHz Low Noise Amplifier

GaAs Monolithic Microwave IC in SMD leadless package

文件：211.49 Kbytes Page：12 Pages

10-16GHz Self biased Low Noise Amplifier

RF AMPLIFIER FOR DIGITAL SERVO CD STSTEM

RF AMPLIFIER FOR DIGITAL SERVO CD STSTEM TA2066F is a 3-beam type PUH compatible RF Amplifier to be used in the CD system. In combination with a CMOS single chip processor TC9295F / TC9296F / TC9405F / TC9406F, a CD system can be composed very simply.

RF AMPLIFIER FOR DIGITAL SERVO CD STSTEM

RF AMPLIFIER FOR DIGITAL SERVO CD STSTEM TA2066F is a 3-beam type PUH compatible RF Amplifier to be used in the CD system. In combination with a CMOS single chip processor TC9295F / TC9296F / TC9405F / TC9406F, a CD system can be composed very simply.

50V - 1.5A QUAD DARLINGTON SWITCHES

文件：98.7 Kbytes Page：8 Pages