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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
DUALP-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •DualP-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltageVGS(TH) | DIODES Diodes Incorporated |  |   | |
COMPLEMENTARYPAIRENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance •LowGateThresholdVoltageVGS(th)1V •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •ComplementaryPairMOSFET •Ultra-SmallSurfaceMountPackage •ESDProtectedGate •TotallyLead-Free&FullyRoHSCompliant(Notes2&am | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. •LoadSwitch Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGate | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：285.4 Kbytes Page：4 Pages | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET 文件：457.81 Kbytes Page：7 Pages | DIODES Diodes Incorporated | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DID |
1535+ |
823 |
|||||
DIODES/美台 |
21+ |
SOT363 |
13880 |
公司只售原装,支持实单 |
|||
DIODES/美台 |
23+ |
SOT-363-6 |
8435 |
原装正品现货假一赔十 |
|||
DIODES/美台 |
24+ |
SOT-363-6 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
DIODES/美台 |
24+ |
SOT-363 |
9600 |
原装现货,优势供应,支持实单! |
|||
DIODES |
21+ |
42664 |
12588 |
原装正品假一罚十 |
|||
DIODES |
24+ |
SOT363 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
DIODES |
23+ |
SOT-363 |
18000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
DIODES/美台 |
22+ |
SOT-363-6 |
30900 |
现货,原厂原装假一罚十! |
|||
DIODES |
2134+ |
SOT363 |
6000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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