N-CHANNEL ENHANCEMENT MODE MOSFET

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Low On-Resistance

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60V N-Channel Enhancement Mode MOSFET

Description The uses advanced trench technolo gy to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. DMN6075SQ General Features VDS = 60V ID =3A RDS(ON)

60V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：551.98 Kbytes Page：7 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：517.88 Kbytes Page：7 Pages

Low On-Resistance

文件：546.35 Kbytes Page：7 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：517.88 Kbytes Page：7 Pages

Low On-Resistance

文件：546.35 Kbytes Page：7 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：517.88 Kbytes Page：7 Pages

60V N-CHANNEL ENHANCEMENT MODE MOSFET

SENSITIVE GATE TRIACS

SENSITIVE GATE TRIACS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

TRIACs 4 AMPERES RMS 200 thru 600 VOLTS

Sensitive Gate Triacs Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors sw

SENSITIVE GATE TRIAC 4.0 AMPS, 200 THRU 600 VOLTS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6071, A, B series types are silicon sensitive gate triacs designed for such applications as light dimmers, motor controls, heating controls and power supplies.

IEC Appliance Inlet C10, Screw-on Mounting, Front Side, Solder or Quick-connect Terminal

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Sensitive Gate Triacs Silicon Bidirectional Thyristors

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