N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation Small-Signal enhancement mode MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications. Low Gate Charge\nLow RDS(ON)\nLow Input/Output Leakage;

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：429.64 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：429.64 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：429.64 Kbytes Page：6 Pages

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Infrared Photodiode

Features: • High Sensitivity, High Reliability • Fast Response, High Speed Modulation • Peak Sensitivity Wavelength Compatible with Infrared Emitters • Wide Detection Area, Wide Half Angle