N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation MOSFET has been designed to minimize the onstate\nresistance (RDS(on)) and yet maintain superior switching\nperformance, making it ideal for high efficiency power management\napplications.

30V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：311.32 Kbytes Page：8 Pages

30V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：311.32 Kbytes Page：8 Pages

30V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：311.32 Kbytes Page：8 Pages

1 WATT CAPABILITY WITH PROPER HEAT SINKING

• 1N3016B THRU 1N3045B AVAILABLE IN JANHC PER MIL-PRF-19500/115 • 1 WATT CAPABILITY WITH PROPER HEAT SINKING • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES, WITH THE EXCEPTION OF SOLDER REFLOW

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Light Emitting Diode (LED)

Description: The NTE3020 through NTE3024 LEDs offer a variety of lens effects and color availability. The Red (NTE3020) source color device is made with Gallium Arsenide Phosphide on Gallium Arsenide Red Light Emitting Diode. The High Efficiency Red (NTE3022) and Orange (NTE3023) source color d

UHF LINEAR POWER TRANSISTOR

The TP3024B is a balanced transistor designed specifically for use in cellular radio systems. This device permits the design of a Class AB push–pull, high gain, broadband amplifier having a high degree of linearity without the need for complicated biasing circuitry. • Specified 26 Volts, 960 MHz