DMN2015UFDE价格
参考价格:¥0.9674
型号:DMN2015UFDE-7 品牌:Diodes 备注:这里有DMN2015UFDE多少钱,2026年最近7天走势,今日出价,今日竞价,DMN2015UFDE批发/采购报价,DMN2015UFDE行情走势销售排行榜,DMN2015UFDE报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DMN2015UFDE | N-CHANNEL ENHANCEMENT MODE MOSFET This new generation 20V N channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions. | DIODES 美台半导体 | ||
DMN2015UFDE | 20V N-CHANNEL ENHANCEMENT MODE MOSFET 文件:211.83 Kbytes Page:6 Pages | DIODES 美台半导体 | ||
20V N-CHANNEL ENHANCEMENT MODE MOSFET 文件:526.48 Kbytes Page:6 Pages | DIODES 美台半导体 | |||
20V N-CHANNEL ENHANCEMENT MODE MOSFET 文件:211.83 Kbytes Page:6 Pages | DIODES 美台半导体 | |||
20V N-CHANNEL ENHANCEMENT MODE MOSFET 文件:526.48 Kbytes Page:6 Pages | DIODES 美台半导体 | |||
20V N-CHANNEL ENHANCEMENT MODE MOSFET 文件:526.48 Kbytes Page:6 Pages | DIODES 美台半导体 | |||
20V N-CHANNEL ENHANCEMENT MODE MOSFET 文件:211.83 Kbytes Page:6 Pages | DIODES 美台半导体 | |||
NPN microwave power transistor DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT446A metal ceramic studless package. FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR • Gold m | PHILIPS 飞利浦 | |||
Integrated Circuit 7-Channel Darlington Array/Driver Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie | NTE | |||
SCRs 1-70 AMPS NON-SENSITIVE GATE Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip | TECCOR | |||
SCRs General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga | TECCOR | |||
POWER RECTIFIERS(20A,50-200V) Switchmode Full Plastic Dual Ultrafast Power Rectifiers Designed for use in switching power supplies, inverters and as free wheeling diodes. These state-of-the-art devices have the following features: ✱ High Surge Capacity ✱ Low Power Loss, High Efficiency ✱ Glass Passivated chip junction | MOSPEC 统懋 |
DMN2015UFDE产品属性
- 类型
描述
- Automotive Compliant PPAP:
On Request*
- Polarity:
N
- ESD Diodes:
Yes
- VDS:
20 V
- VGS:
12 ±V
- IDS @ TA = +25°C:
10.5 A
- PD @ TA = +25°C:
2.03 W
- RDS(ON) Max @ VGS (10V):
N/A mΩ
- RDS(ON) Max @ VGS (4.5V):
11.6 mΩ
- RDS(ON) Max @ VGS (2.5V):
15 mΩ
- RDS(ON) Max @ VGS (1.8V):
30 mΩ
- VGS (th) Max:
1.1 V
- QG Typ @ VGS = 4.5V (nC):
19.7 nC
- QG Typ @ VGS = 10V (nC):
45.6 nC
- Packages:
U-DFN2020-6 (Type E)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
26+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
Diodes Incorporated |
25+ |
N/A |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
DIODES/美台 |
21+ |
UDFN2020-6 |
8080 |
只做原装,质量保证 |
|||
DIODES |
24+ |
U-DFN2020 |
33416 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
DIODES/美台 |
25+ |
DFN-2020-6 |
8435 |
原装正品现货假一赔十 |
|||
DIODES(美台) |
U-DFN2020-6(E 类) |
4610 |
全新原装正品现货可开票 |
||||
SEMTECH |
2016+ |
DFN |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
DIODES/美台 |
26+ |
U-DFN2020 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
DIODES/美台 |
26+ |
QFN |
2988 |
一级代理优势现货,全新正品直营店 |
|||
DIODES/美台 |
24+ |
U-DFN2020-6 |
9600 |
原装现货,优势供应,支持实单! |
DMN2015UFDE规格书下载地址
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2020-1-9
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