位置：首页 > IC中文资料 > DMN2004DWK-7-F
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. •LoadSwitch Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGate | DIODESDiodes Incorporated 美台半导体 |  |   | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：285.4 Kbytes Page：4 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET 文件：457.81 Kbytes Page：7 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
COMPLEMENTARYPAIRENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance •LowGateThresholdVoltageVGS(th)1V •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •ComplementaryPairMOSFET •Ultra-SmallSurfaceMountPackage •ESDProtectedGate •TotallyLead-Free&FullyRoHSCompliant(Notes2&am | DIODESDiodes Incorporated 美台半导体 | | | |
DUALP-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •DualP-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltageVGS(TH) | DIODESDiodes Incorporated 美台半导体 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
24+ |
SOT-363-6 |
8913 |
全新原装现货 |
|||
DIODES/美台 |
23+ |
SOT-363-6 |
9000 |
原装正品假一罚百!可开增票! |
|||
DIODES |
24+ |
SOT363 |
3500 |
原装现货假一赔十 |
|||
DIODES/美台 |
21+ |
NA |
9990 |
只有原装 |
|||
DIODES/美台 |
24+ |
SOT363 |
20000 |
只做正品原装现货 |
|||
DIODES/美台 |
24+ |
SOT-363 |
60000 |
||||
DIODES/美台 |
25+ |
SOT-363 |
188600 |
全新原厂原装正品现货 欢迎咨询 |
|||
DIODES/美台 |
22+ |
SOT-363 |
32094 |
原装正品现货 |
|||
DIODES/美台 |
24+ |
SC-70-6(SOT-363) |
6000 |
全新原装深圳仓库现货有单必成 |
|||
DIODES INCORPORATED |
24+ |
con |
2500 |
优势库存,原装正品 |
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