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DMN1019UFDE价格

参考价格:¥0.8390

型号:DMN1019UFDE-7 品牌:Diodes 备注:这里有DMN1019UFDE多少钱,2026年最近7天走势,今日出价,今日竞价,DMN1019UFDE批发/采购报价,DMN1019UFDE行情走势销售排行榜,DMN1019UFDE报价。
型号 功能描述 生产厂家 企业 LOGO 操作
DMN1019UFDE

N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

DIODES

美台半导体

DMN1019UFDE

12V N-CHANNEL ENHANCEMENT MODE MOSFET

文件:223.09 Kbytes Page:7 Pages

DIODES

美台半导体

12V N-CHANNEL ENHANCEMENT MODE MOSFET

文件:287.04 Kbytes Page:7 Pages

DIODES

美台半导体

12V N-CHANNEL ENHANCEMENT MODE MOSFET

文件:223.09 Kbytes Page:7 Pages

DIODES

美台半导体

Low-voltage frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1019AM BICMOS device integrates prescalers, a programmable divider, and phase comparator to implement a phase-locked loop. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3 V

PHILIPS

飞利浦

Low-voltage frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1019M BICMOS device integrates prescalers, a programmable divider, and phase comparator to implement a phase-locked loop. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3 V

PHILIPS

飞利浦

METAL GATE RF SILICON FET

文件:37.52 Kbytes Page:4 Pages

SEME-LAB

METAL GATE RF SILICON FET

文件:37.52 Kbytes Page:4 Pages

SEME-LAB

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

文件:38.1 Kbytes Page:2 Pages

POLYFET

DMN1019UFDE产品属性

  • 类型

    描述

  • Automotive Compliant PPAP:

    On Request*

  • Polarity:

    N

  • ESD Diodes:

    Yes

  • VDS:

    12 V

  • VGS:

    8 ±V

  • IDS @ TA = +25°C:

    11 A

  • PD @ TA = +25°C:

    0.69 W

  • RDS(ON) Max @ VGS (10V):

    N/A mΩ

  • RDS(ON) Max @ VGS (4.5V):

    10 mΩ

  • RDS(ON) Max @ VGS (2.5V):

    12 mΩ

  • RDS(ON) Max @ VGS (1.8V):

    14 mΩ

  • VGS (th) Max:

    0.8 V

  • QG Typ @ VGS = 4.5V (nC):

    27.3 nC

  • QG Typ @ VGS = 10V (nC):

    N/A nC

  • Packages:

    U-DFN2020-6 (Type E)

更新时间:2026-8-1 17:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES/美台
26+
NA
30000
房间原装现货特价热卖,有单详谈
DIODES/美台
21+
U-DFN2020-6
8080
只做原装,质量保证
DIODES
24+
DFN2020-6
17316
正规渠道,免费送样。支持账期,BOM一站式配齐
DIODES
25+
DFN2020-6
9000
只做原装正品 有挂有货 假一赔十
DIODES
25+
U-DFN2020
12880
原装,诚信经营
DIODES
23+
DFN
1005
全新 发货1-2天
DIODES/美台
26+
U-DFN2020-E-6
11868
电子元器件供应原装现货. 优质独立分销。原厂核心渠道
DIODES(美台)
U-DFN2020-6(E 类)
5351
全新原装正品现货可开票
DIODES/美台
26+
U-DFN2020-E-6
11868
原厂全新正品旗舰店优势现货
DIODES
23+
FDN202-6
20000

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