12V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN1008UFDFQ is suitable for automoti

12V N-CHANNEL ENHANCEMENT MODE MOSFET

12V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN1008UFDFQ is suitable for automoti

12V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN1008UFDFQ is suitable for automoti

QUICK-FIT TERMINALS

[KEYSTONE] AVAILABLE IN BRASS OR STEEL TABS • Ideal for rugged multi-insertion applications • Pre-assembled header reduces PC assembly costs • Increases PC board retention strength • Keeps terminals perpendicular • Maintains position for wave soldering

PRI TRANSFORMERS Reinforced Insulation

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Wire Wound

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RF LDMOS Wideband Integrated Power Amplifiers

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RF LDMOS Wideband Integrated Power Amplifier