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型号 功能描述 生产厂家 企业 LOGO 操作
DMN1008UFDFQ

12V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN1008UFDFQ is suitable for automoti

DIODES

美台半导体

DMN1008UFDFQ

12V N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to meet the stringent requirements ofautomotive applications. It is qualified to AEC-Q101, supported by aPPAP. •0.6mm Profile – Ideal for Low Profile Applications\n•PCB Footprint of 4mm2\n•Low Gate Threshold Voltage\n•Fast Switching Speed\n•Totally Lead-Free & Fully RoHS Compliant \n•Halogen and Antimony Free. “Green” Device \n•The DMN1008UFDFQ is suitable for automotive applicationsrequiring specific change;

DIODES

美台半导体

丝印代码:8N;12V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN1008UFDFQ is suitable for automoti

DIODES

美台半导体

丝印代码:8N;12V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN1008UFDFQ is suitable for automoti

DIODES

美台半导体

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

PANJIT

強茂

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 10A)

SINGLE-PHASE SILICON BRIDGE VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 10A FEA TURES l Surge overload rating—200 Amperes peak l Low forward voltage drop and reverse leakage l Small size, simple installation l Plastic package has Underwriter Laboratory

PANJIT

強茂

ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 10.0 Amperes)

FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound ● Exceeds environmental standards of MIL-S-19500/228 ● Low power loss, high efficiency ● Low forward voltage, high current capability ● High surg

PANJIT

強茂

uP Compatible, Double-Buffered D to A Converters

文件:369.16 Kbytes Page:22 Pages

NSC

国半

uP Compatible, Double-Buffered D to A Converters

文件:369.16 Kbytes Page:22 Pages

NSC

国半

DMN1008UFDFQ产品属性

  • 类型

    描述

  • Automotive Compliant PPAP:

    Yes

  • Polarity:

    N

  • ESD Diodes:

    No

  • VDS:

    12 V

  • VGS:

    8 ±V

  • IDS @ TA = +25°C:

    12.2 A

  • PD @ TA = +25°C:

    1.7 W

  • RDS(ON) Max @ VGS (10V):

    N/A mΩ

  • RDS(ON) Max @ VGS (4.5V):

    8 mΩ

  • RDS(ON) Max @ VGS (2.5V):

    12.5 mΩ

  • RDS(ON) Max @ VGS (1.8V):

    N/A mΩ

  • VGS (th) Max:

    1 V

  • QG Typ @ VGS = 4.5V (nC):

    8 nC

  • QG Typ @ VGS = 10V (nC):

    N/A nC

  • Packages:

    U-DFN2020-6

更新时间:2026-8-3 8:21:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES
23+
X2-TSN1820
20000
Diodes Incorporated
25+
N/A
6843
样件支持,可原厂排单订货!
DIODES/美台
26+
X4-DSN3118-6
25000
原装正品公司现货,假一赔十!
Diodes Incorporated
25+
N/A
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
DIODES达尔
20+
-
880000
明嘉莱只做原装正品现货
DIODES/美台
21+
X4-DSN3118-6
8080
只做原装,质量保证
ON/DIODES/PANJIT
24+
SC59
43000
DIODES/美台
23+
NA
12730
原装正品代理渠道价格优势
DIODES
24+
X2-TSN1820
5000
全新原装正品,现货销售
DIODES
16+
SC59
37000
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥!

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