DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation complementary MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Low Input Capacitance

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450V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件：311.53 Kbytes Page：7 Pages

Low Input Capacitance

文件：311.53 Kbytes Page：7 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7A@ TC=25℃ ·Drain Source Voltage -VDSS= 450V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Power MOSFETs

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ● VGS Rated at ±20V ● Silicon Gate for Fast Switching Spe

N-Channel Power MOSFETs, 8A, 450 V/500V

Description These devices are n-channel, enhancement mode, power MOSFETs designed sepecially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.

Fast Switching Speed

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