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DMG2301U价格
参考价格：￥0.6865
型号：DMG2301U-7 品牌：Diodes 备注：这里有DMG2301U多少钱，2026年最近7天走势，今日出价，今日竞价，DMG2301U批发/采购报价，DMG2301U行情走势销售排行榜，DMG2301U报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DMG2301U | P-CHANNEL ENHANCEMENT MODE MOSFET Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Totally Lead-Fre | DIODES 美台半导体 |   | |
DMG2301U | P-CHANNEL ENHANCEMENT MODE MOSFET Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Totally Le | TYSEMI 台湾TY半导体 | | |
DMG2301U | P-CHANNEL ENHANCEMENT MODE MOSFET Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Totally Le | ZPSEMIZP Semiconductor 至尚臻品 | | |
DMG2301U | P-CHANNEL ENHANCEMENT MODE MOSFET | DIODES 美台半导体 | | |
DMG2301U | P-CHANNEL ENHANCEMENT MODE MOSFET 文件：502.51 Kbytes Page：7 Pages | DIODES 美台半导体 | | |
P-CHANNEL ENHANCEMENT MODE MOSFET Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Totally Lead-Fre | DIODES 美台半导体 | | ||
丝印代码：G21；P-CHANNEL ENHANCEMENT MODE MOSFET Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Totally Le | TYSEMI 台湾TY半导体 | | ||
P-CHANNEL ENHANCEMENT MODE MOSFET 文件：279.99 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
P-CHANNEL ENHANCEMENT MODE MOSFET 文件：502.51 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
P-CHANNEL ENHANCEMENT MODE MOSFET 文件：502.51 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
P-Channel 20-V (D-S) MOSFET 文件：1.0409 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
Silicon NPN Transistor High Voltage Horizontal Output Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: • Collector–Emitter Voltage: VCEX = 1500V • Glassivated Base–Collector Junction • Safe Operating Area @ 50µs = 20A, 400V • Switchin | NTE | | ||
Reflective Photosensor 文件：49.97 Kbytes Page：2 Pages | PANASONIC 松下 | | ||
PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications 文件：225.65 Kbytes Page：14 Pages | NSC 国半 | | ||
PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications 文件：225.65 Kbytes Page：14 Pages | NSC 国半 | | ||
EXCALIBUR 3-STATE-OUTPUT WIDE-BANDWIDTH POWER OPERATIONAL AMPLIFIER 文件：324.91 Kbytes Page：22 Pages | TI 德州仪器 | |
DMG2301U产品属性
- 类型
描述
- 型号
DMG2301U
- 制造商
DIODES
- 制造商全称
Diodes Incorporated
- 功能描述
P-CHANNEL ENHANCEMENT MODE MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES |
24+ |
SOT23-3 |
6800 |
只做自己库存,全新原装进口正品假一赔百,可开13个点增票 |
|||
DIODES/美台 |
25+ |
SOT23 |
34127 |
DIODES/美台全新特价DMG2301U-7即刻询购立享优惠#长期有货 |
|||
DIODES(美台) |
21+ |
SOT-23-3 |
41800 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
DIODES/美台 |
23+ |
SOT-23-3 |
9000 |
原装正品假一罚百!可开增票! |
|||
DIODES/美台 |
19+ |
SOT-23-3 |
6000 |
||||
DIODES/美台 |
21+ |
SOT-23-3 |
4833 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
DiodesZetex |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
DIODES |
16+ |
SOT23 |
18320 |
进口原装现货/价格优势! |
|||
DIODES达尔 |
25+ |
SOT23 |
918000 |
明嘉莱只做原装正品现货 |
|||
DIODES/美台 |
24+ |
SOT23-3 |
200000 |
优质供应商,支持样品配送。原装诚信 |
DMG2301U规格书下载地址
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DdatasheetPDF页码索引
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