N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMG1012UWQ is suitable fo

N-CHANNEL ENHANCEMENT MODE MOSFET

丝印代码：BE2；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMG1012UWQ is suitable fo

丝印代码：BE2；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMG1012UWQ is suitable fo

120W STEP-DOWN SWITCHING REGULATOR

DESCRIPTION The GS-R1012 is a step-down switching voltage regulator suitable to provide 12V/10A output voltage from a wide input voltage range (18 to 36V). FEATURES ■ Wide input voltage range (18 to 36V) ■ High efficiency (90 min.) ■ Parallel operation with current sharing ■ Synchronization

FOR OPTICAL INFORMATION SYSTEMS

DESCRIPTION ML1XX2 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and standard CW light output of 30mW. ML1XX2 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

VTB Process Photodiodes

PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.

VTP Process Photodiodes

PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window TO-46 package. Cathode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response.

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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