Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes

文件：378.26 Kbytes Page：8 Pages

Beam-Lead Anti-Parallel, N-Type

Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of the low capacitance junctions. Beam-lead Schottky barrier mixer diodes are made by the deposition of a s • Low 1/f noise \n• Low intermodulation distortion \n• Epoxy and hermetically sealed packages \n• SPC controlled wafer fabrication;

Silicon Beam-Lead Schottky Mixer Diodes – Singles, Pairs, and Quads in Ceramic Hermetic Packages

Features  Low 1/f noise  Low intermodulation distortion  Hermetically sealed packages  Statistical process control wafer fabrication  Packages rated MSL1, 260 C per JEDEC J-STD-020)

Silicon Beam-Lead Schottky Mixer Diodes – Singles, Pairs, and Quads in Ceramic Hermetic Packages

Features  Low 1/f noise  Low intermodulation distortion  Hermetically sealed packages  Statistical process control wafer fabrication  Packages rated MSL1, 260 C per JEDEC J-STD-020)

DSP Microcomputer

GENERAL DESCRIPTION The ADSP-2186 is a single-chip microcomputer optimized for digital signal processing (DSP) and other high speed numeric processing applications. FEATURES PERFORMANCE 25 ns Instruction Cycle Time 40 MIPS Sustained Performance Single-Cycle Instruction Execution

Transmit Line Interface

DESCRIPTION The DS2186 T1/CEPT Transmit Line Interface Chip interfaces user equipment to North American (T1–1.544 MHz) and European (CEPT–2.048 MHz) primary rate communications networks. The device is compatible with all types of twisted pair and coax cable found in such networks. FEATURES • Li

3V W-CDMA POWER 1900MHZ/ 3V LINEAR POWER AMPLIFIER

Product Description The RF2186 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 3V CDMA-2000 an

3V W-CDMA POWER 1900MHZ/ 3V LINEAR POWER AMPLIFIER

Product Description The RF2186 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 3V CDMA-2000 an

DOLBY S-TYPE NOISE REDUCTION PROCESSOR

文件：81.45 Kbytes Page：11 Pages