DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes—Singles, Pairs and Quads Bondable and Packaged Chips

Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of the low capacitance junctions.\n\nBeam-lead Schottky barrier mixer diodes are made by the deposition of • Low 1/f noise \n• Epoxy and hermetically sealed packages \n• SPC controlled wafer fabrication;

Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes

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Beam-Lead Series Pair, N-Type

Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of the low capacitance junctions. Beam-lead Schottky barrier mixer diodes are made by the deposition of a s • Low 1/f noise \n• Epoxy and hermetically sealed packages \n• SPC controlled wafer fabrication\n;

Silicon Beam-Lead Schottky Mixer Diodes – Singles, Pairs, and Quads in Ceramic Hermetic Packages

Features  Low 1/f noise  Low intermodulation distortion  Hermetically sealed packages  Statistical process control wafer fabrication  Packages rated MSL1, 260 C per JEDEC J-STD-020)

Silicon Beam-Lead Schottky Mixer Diodes – Singles, Pairs, and Quads in Ceramic Hermetic Packages

Features  Low 1/f noise  Low intermodulation distortion  Hermetically sealed packages  Statistical process control wafer fabrication  Packages rated MSL1, 260 C per JEDEC J-STD-020)

Silicon Beam-Lead Schottky Mixer Diodes – Singles, Pairs, and Quads in Ceramic Hermetic Packages

Features  Low 1/f noise  Low intermodulation distortion  Hermetically sealed packages  Statistical process control wafer fabrication  Packages rated MSL1, 260 C per JEDEC J-STD-020)

34.5 dB 5-200 MHz 800 mWATT WIDEBAND LINEAR AMPLIFIERS

The RF Line Wideband Linear Amplifier . . . designed for amplifier applications in 50 to 100 ohm systems requiring wide bandwidth, low noise and low distortion. This hybrid provides excellent gain stability with temperature and linear amplification as a result of the push–pull circuit design. •

34.5 dB 5-200 MHz 800 mWATT WIDEBAND LINEAR AMPLIFIERS

The RF Line Wideband Linear Amplifier . . . designed for amplifier applications in 50 to 100 ohm systems requiring wide bandwidth, low noise and low distortion. This hybrid provides excellent gain stability with temperature and linear amplification as a result of the push–pull circuit design. •

Photo Modules for PCM Remote Control Systems

Description The TSOP28.. – series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. The main benefit is the

FAST SYNCHRONOUS-BUCK MOSFET DRIVERS WITH DEADTIME CONTROL

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FAST SYNCHRONOUS-BUCK MOSFET DRIVERS WITH DEADTIME CONTROL

文件：198.98 Kbytes Page：15 Pages