COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features PCB Footprint of 4mm2 Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Maximum Height ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change contro

mosfets

丝印代码：O4；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features PCB Footprint of 4mm2 Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Maximum Height ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change contro

丝印代码：O4；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features PCB Footprint of 4mm2 Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Maximum Height ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change contro

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features PCB Footprint of 4mm2 Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Maximum Height ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DMC2025UFDBQ is suitable for automotive applications re

丝印代码：O4；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features PCB Footprint of 4mm2 Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Maximum Height ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DMC2025UFDBQ is suitable for automotive applications re

丝印代码：O4；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features PCB Footprint of 4mm2 Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Maximum Height ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DMC2025UFDBQ is suitable for automotive applications re

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL2025 series is supplied in the SOD59 (TO220AC) conventional leaded package. FEATURES • Low forward volt drop • Fast switching • Reverse sur

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL2025B series is supplied in the SOT404 surface mounting package. FEATURES • Low forward volt drop • Fast switching • Reverse surge capabili

STEREO AUDIO AMPLIFIER

The TEA2025B/D is a monolithic integrated circuit in 12+2+2 Powerdip and 12+4+4 SO, intended for use as dual or bridge power audio amplifier port able radio cassette players.