位置：首页 > IC中文资料第1781页 > DMC1229UFDB
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DMC1229UFDB | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Max Height Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control Applications Load Switch Power Managemen | DIODES 美台半导体 |   | |
DMC1229UFDB | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | DIODES 美台半导体 | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Max Height Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control Applications Load Switch Power Managemen | DIODES 美台半导体 | | ||
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Max Height Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control Applications Load Switch Power Managemen | DIODES 美台半导体 | | ||
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET 文件：290.52 Kbytes Page：9 Pages | DIODES 美台半导体 | | ||
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET 文件：290.52 Kbytes Page：9 Pages | DIODES 美台半导体 | | ||
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET 文件：290.52 Kbytes Page：9 Pages | DIODES 美台半导体 | | ||
Customer Specification Construction 1) Conductor a) Material Tinned Copper, per ASTM B-33 and CID-A-A-59551, latest revision b) Stranding Solid 2) Braid Data a) Nominal Dimensions .125 x .020 Inches b) AWG of Ends 36 c) Number of Carriers 24 d) Nominal Percent Coverage N/A e) Total Number of Ends 72 f) Approx. | ALPHAWIRE | | ||
Hall Effect Latch for High Temperature Operation Description These Hall-effect latches are extremely temperature-stable and stress resistant sensor ICs especially suited for operation over extended temperature ranges to 150°C. Superior high temperature performance is made possible through a novel Schmitt trigger circuit that maintains operate a | ALLEGRO | | ||
Variable RF Inductor 文件：82.08 Kbytes Page：2 Pages | YANTEL 研通高频 | | ||
Original Strain Relief Bushings 文件：129.02 Kbytes Page：1 Pages | Heyco | | ||
Allen Wrench (Hex Key) - 2.5mm 文件：122.58 Kbytes Page：2 Pages | Adafruit | |
DMC1229UFDB产品属性
- 类型
描述
- 型号
DMC1229UFDB
- 制造商
Diodes Incorporated
- 功能描述
MOSFET N/P-CH 12V U-DFN2020-6
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Diodes(美台) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
DIODES |
24+ |
DFN2020-6 |
25048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
DIODES/美台 |
25+ |
SMD |
1460 |
原装正品,假一罚十! |
|||
DIODES/美台 |
25+ |
U-DFN2020-6 |
32360 |
DIODES/美台全新特价DMC1229UFDB-7即刻询购立享优惠#长期有货 |
|||
DIODES |
23+ |
DFN2020-6 |
3000 |
正规渠道,只有原装! |
|||
DIODES/美台 |
22+ |
U-DFN2020-6(TypeB) |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
DIODES |
25+ |
DFN2020-B-6 |
30000 |
代理全新原装现货,价格优势 |
|||
DIODES/美台 |
25+ |
U-DFN2020-6 |
918000 |
明嘉莱只做原装正品现货 |
|||
DIODES/美台 |
2152+ |
DFN2020-6 |
8000 |
原装正品现货假一罚十 |
|||
DIODES/美台 |
24+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
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