DMC10价格
参考价格：￥1.8278
型号：DMC1017UPD-13 品牌：Diodes Incorporated 备注：这里有DMC10多少钱，2024年最近7天走势，今日出价，今日竞价，DMC10批发/采购报价，DMC10行情走势销售排行榜，DMC10报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET DescriptionandApplications ThisnewgenerationComplementaryPairEnhancementModeMOSFEThasbeendesignedtominimizeRDS(on)andyetmaintainsuperiorswitchingperformance.ThisdeviceisidealforuseinNotebookbatterypowermanagementandLoadswitch. •NotebookBatteryPowerManagement | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 |  |   | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET DescriptionandApplications ThisnewgenerationComplementaryPairEnhancementModeMOSFEThasbeendesignedtominimizeRDS(on)andyetmaintainsuperiorswitchingperformance.ThisdeviceisidealforuseinNotebookbatterypowermanagementandLoadswitch. •NotebookBatteryPowerManagement | DIODESDiodes Incorporated 达尔科技 |  | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET DescriptionandApplications ThisnewgenerationComplementaryPairEnhancementModeMOSFEThasbeendesignedtominimizeRDS(on)andyetmaintainsuperiorswitchingperformance.ThisdeviceisidealforuseinNotebookbatterypowermanagementandLoadswitch. •NotebookBatteryPowerManagement | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET DescriptionandApplications ThisnewgenerationComplementaryPairEnhancementModeMOSFEThasbeendesignedtominimizeRDS(on)andyetmaintainsuperiorswitchingperformance.ThisdeviceisidealforuseinNotebookbatterypowermanagementandLoadswitch. •NotebookBatteryPowerManagement | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features 100UnclampedInductiveSwitching,TestinProduction– EnsuresMoreReliableandRobustEndApplication HighConversionEfficiency LowRDS(ON)–MinimizesOnStateLosses LowInputCapacitance FastSwitchingSpeed WettableFlankforImprovedOpticalInspection TotallyLead-Free& | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features 100UnclampedInductiveSwitching,TestinProduction– EnsuresMoreReliableandRobustEndApplication HighConversionEfficiency LowRDS(ON)–MinimizesOnStateLosses LowInputCapacitance FastSwitchingSpeed WettableFlankforImprovedOpticalInspection TotallyLead-Free& | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features LowOn-Resistance LowInputCapacitance LowProfile,0.6mmMaxHeight ESDHBMProtectedupto1.5kV,MMProtectedupto150V TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchan | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features LowOn-Resistance LowInputCapacitance LowProfile,0.6mmMaxHeight ESDHBMProtectedupto1.5kV,MMProtectedupto150V TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchan | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features LowOn-Resistance LowInputCapacitance LowProfile,0.6mmMaxHeight ESDHBMProtectedupto1.5kV,MMProtectedupto150V TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchan | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features LowOn-Resistance LowInputCapacitance LowProfile,0.6mmMaxHeight TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol Applications LoadSwitch PowerManagemen | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features LowOn-Resistance LowInputCapacitance LowProfile,0.6mmMaxHeight TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol Applications LoadSwitch PowerManagemen | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features LowOn-Resistance LowInputCapacitance LowProfile,0.6mmMaxHeight TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol Applications LoadSwitch PowerManagemen | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features LowOn-Resistance LowInputCapacitance LowProfile,0.6mmMaxHeight ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol Applications LoadSwi | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features LowOn-Resistance LowInputCapacitance LowProfile,0.6mmMaxHeight ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol Applications LoadSwi | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features LowOn-Resistance LowInputCapacitance LowProfile,0.6mmMaxHeight ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol Applications LoadSwi | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features 100UnclampedInductiveSwitch(UIS)TestinProduction LowInputCapacitance LowOn-Resistance FastSwitchingSpeed TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontr | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features 100UnclampedInductiveSwitch(UIS)TestinProduction LowInputCapacitance LowOn-Resistance FastSwitchingSpeed TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontr | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features 100UnclampedInductiveSwitch(UIS)TestinProduction LowInputCapacitance LowOn-Resistance FastSwitchingSpeed TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontr | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features 100UnclampedInductiveSwitch(UIS)TestinProduction LowInputCapacitance LowOn-Resistance FastSwitchingSpeed TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontr | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET POWERDI 文件：507.5 Kbytes Page：10 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET POWERDI 文件：507.5 Kbytes Page：10 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET 文件：510.82 Kbytes Page：10 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET 文件：510.82 Kbytes Page：10 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET POWERDI짰5060-8 文件：456.66 Kbytes Page：9 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET 文件：508.06 Kbytes Page：10 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET 文件：508.06 Kbytes Page：10 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET 文件：508.06 Kbytes Page：10 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET 文件：508.06 Kbytes Page：10 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET 文件：666.63 Kbytes Page：10 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET 文件：666.63 Kbytes Page：10 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET 文件：666.63 Kbytes Page：10 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET 文件：666.63 Kbytes Page：10 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET 文件：666.63 Kbytes Page：10 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET 文件：666.63 Kbytes Page：10 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET 文件：383.12 Kbytes Page：9 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET 文件：383.12 Kbytes Page：9 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET 文件：383.12 Kbytes Page：9 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET 文件：357.57 Kbytes Page：9 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET 文件：357.57 Kbytes Page：9 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET 文件：357.57 Kbytes Page：9 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET 文件：564.21 Kbytes Page：9 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET 文件：564.21 Kbytes Page：9 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET 文件：564.21 Kbytes Page：9 Pages | DIODESDiodes Incorporated 达尔科技 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES |
2016+ |
POWERDI5060 |
5000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
DIODES/美台 |
24+ |
POWERDI5060 |
990000 |
明嘉莱只做原装正品现货 |
|||
DIODES |
20+ |
POWERDI5060 |
32970 |
原装优势主营型号-可开原型号增税票 |
|||
DIODES |
22+ |
NA |
12080 |
加我QQ或微信咨询更多详细信息, |
|||
DIODES/美台 |
22+ |
POWERDI5060-8 |
25000 |
只有原装绝对原装,支持BOM配单! |
|||
DIODES/美台 |
22+ |
POWERDI5060-8 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
DIODES |
14+ |
POWERDI5060-8 |
2500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
DIODES |
21+ |
POWERDI5060-8 |
2500 |
原装现货假一赔十 |
|||
DIODES/美台 |
23+ |
NA/ |
4990 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
DIODES美台 |
24+23+ |
POWERDI5060-8 |
12580 |
16年现货库存供应商终端BOM表可配单提供样品 |
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DdatasheetPDF页码索引
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