丝印代码：DM176；HIGH-SPEED DIFFERENTIAL LINE TRANSCEIVER

FEATURES · Low-Voltage Differential Driver and Receiver for Half-Duplex Operation · Designed for Signaling Rates of 400 Mbit/s · ESD Protection Exceeds 15 kV on Bus Pins · Operates From a Single 3.3-V Supply · Low-Voltage Differential Signaling With Typical Output Voltages of 350 mV and a

丝印代码：DM176；HIGH-SPEED DIFFERENTIAL LINE TRANSCEIVER

FEATURES · Low-Voltage Differential Driver and Receiver for Half-Duplex Operation · Designed for Signaling Rates of 400 Mbit/s · ESD Protection Exceeds 15 kV on Bus Pins · Operates From a Single 3.3-V Supply · Low-Voltage Differential Signaling With Typical Output Voltages of 350 mV and a

丝印代码：DM176；HIGH-SPEED DIFFERENTIAL LINE TRANSCEIVER

FEATURES · Low-Voltage Differential Driver and Receiver for Half-Duplex Operation · Designed for Signaling Rates of 400 Mbit/s · ESD Protection Exceeds 15 kV on Bus Pins · Operates From a Single 3.3-V Supply · Low-Voltage Differential Signaling With Typical Output Voltages of 350 mV and a

丝印代码：DM176；HIGH-SPEED DIFFERENTIAL LINE TRANSCEIVER

FEATURES · Low-Voltage Differential Driver and Receiver for Half-Duplex Operation · Designed for Signaling Rates of 400 Mbit/s · ESD Protection Exceeds 15 kV on Bus Pins · Operates From a Single 3.3-V Supply · Low-Voltage Differential Signaling With Typical Output Voltages of 350 mV and a

丝印代码：DM176；HIGH-SPEED DIFFERENTIAL LINE TRANSCEIVER

FEATURES · Low-Voltage Differential Driver and Receiver for Half-Duplex Operation · Designed for Signaling Rates of 400 Mbit/s · ESD Protection Exceeds 15 kV on Bus Pins · Operates From a Single 3.3-V Supply · Low-Voltage Differential Signaling With Typical Output Voltages of 350 mV and a

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.