N-CHANNEL ENHANCEMENT MODE MOSFET

General Description DG4N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The

VDMOS

4 Amps, 600 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

4 Amps竊?00Volts N-Channel MOSFET

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4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

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N-Channel Power MOSFET

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N-CHANNEL POWER MOSFET

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