| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 20V, 57A, RDS(ON) = 12mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 |   | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 20V, 45A, RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 24mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 20V, 57A, RDS(ON) = 12mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 20V, 45A, RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 24mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 华瑞 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
24+ |
TSSOP |
6618 |
公司现货库存,支持实单 |
|||
CET |
25+ |
TO-251 |
1890 |
原装正品,假一罚十! |
|||
VBsemi |
24+ |
TO251 |
11000 |
原装正品 有挂有货 假一赔十 |
|||
C |
22+ |
TO-252 |
6000 |
十年配单,只做原装 |
|||
CET/華瑞 |
23+ |
TO-251 TO-252 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CET |
TO-251 |
50000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
TOSHIBA/东芝 |
23+ |
TO-252 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
CET |
23+ |
TO-251 |
12800 |
公司只有原装 欢迎来电咨询。 |
|||
CET/華瑞 |
24+ |
TO-251 |
60000 |
||||
CET/華瑞 |
22+ |
TO-251 |
100000 |
代理渠道/只做原装/可含税 |
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DdatasheetPDF页码索引
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