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型号 功能描述 生产厂家 企业 LOGO 操作
CEP61A2

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 57A, RDS(ON) = 12mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 57A, RDS(ON) = 12mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 45A, RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 24mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 45A, RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 24mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

CEP61A2产品属性

  • 类型

    描述

  • 型号

    CEP61A2

  • 制造商

    CET

  • 制造商全称

    Chino-Excel Technology

  • 功能描述

    N-Channel Enhancement Mode Field Effect Transistor

更新时间:2026-8-1 11:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CET/華瑞
23+
TO2203
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
CET
23+
TO220/3
7000
绝对全新原装!100%保质量特价!请放心订购!
CET
24+
TO2203
999
AD
25+
TO220/3
3000
原盒原标,正品现货 诚信经营 价格美丽 假一罚十

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