NPN PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (DDTB) • Built-In Biasing Resistors • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring specific change

NPN PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (DDTB) • Built-In Biasing Resistors, R1, R2 • Lead, Halogen and Antimony Free, RoHS Compliant • Green Device (Notes 2 and 3)

NPN PRE-BIASED 500 MA SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (DDTB) • Built-In Biasing Resistors • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring specific change control

NPN, 50V, 0.5A, SOT23

NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR

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NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (DDTB) • Built-In Biasing Resistors • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 2 and 3)

丝印代码：N76；NPN PRE-BIASED 500 MA SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (DDTB) • Built-In Biasing Resistors • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring specific change control

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS NPN 200MW SOT23-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS NPN 200MW SOT23-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

ZenBlockTM; zener with integrated blocking diode

DESCRIPTION Cavity free cylindrical glass package through ImplotecTM(1) technology. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. FEATURES • Zener and blocking function in one package • Glass passivated • Low leakage current

POWER TRANSISTORS(10A,60-100V,125W)

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP140,TIP141,TIP142 -->NPN TIP145,TIP146,TIP147 ---> PNP . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140,

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP

Silicon epitaxial planar type

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