Rectifier Diode Module

Rectifier Diode Module

Pressure contact technology for high reliability

Thermis    Key Parameters    VDRM / VRRM 2800 - 3400 V    IFAVM 175 A (TC=100 °C)    IFSM 3570A (T 4500 A C=55°C)    VT0 0,9 V    rT 1,8 mΩ    RthJC 0,17 K/W    Base plate 50 mm    Weight 800 g Features • Pressure contact technology for high reliability • Industrial standard package •

Rectifier Diode Module

可控硅/二极管模块

封装/外壳：模块 包装：散装 描述：DIODE MODULE GP 3200V 223A 分立半导体产品 二极管 - 整流器 - 阵列

可控硅/二极管模块

封装/外壳：模块 包装：管件 描述：DIODE MODULE GP 3400V 223A 分立半导体产品 二极管 - 整流器 - 阵列

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

N-CHANNEL BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance

Silicon Complementary Transistors High Voltage, Medium Power Switch

Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high–speed switching and linear amplifier applications for high–voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Fea

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