型号 功能描述 生产厂家 企业 LOGO 操作
DCX54-16

NPN SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (DCX51) • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2)

DIODES

美台半导体

NPN SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (DCX51) • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2)

DIODES

美台半导体

封装/外壳:TO-243AA 包装:散装 描述:TRANS NPN 45V 1A SOT89-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

DIODES

美台半导体

45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistor in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 q

NEXPERIA

安世

45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistor in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified

NEXPERIA

安世

45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. 2. Features and benefits • High collector current capa

NEXPERIA

安世

45 V, 1 A NPN medium power transistors

文件:299.68 Kbytes Page:22 Pages

EPCOS

爱普科斯

45V/60V/80V, 1A NPN medium power transistors

文件:1.40285 Mbytes Page:14 Pages

NEXPERIA

安世

DCX54-16产品属性

  • 类型

    描述

  • 型号

    DCX54-16

  • 功能描述

    两极晶体管 - BJT 1000W 45Vceo

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-12-28 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES/美台
24+
NA/
15913
原装现货,当天可交货,原型号开票
DIODES
24+
SOT-89
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
DIODES/美台
22+
SOT-89
100000
代理渠道/只做原装/可含税
DIODES/美台
25+
SOT-89
2000
原装正品,假一罚十!
DIODES/美台
24+
SOT89-3L
9600
原装现货,优势供应,支持实单!
DIODES/美台
2447
SOT-89
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
DIODES
22+
SOT-89
20000
公司只有原装 品质保证
DIODES/美台
25+
SOT-89
34105
DIODES/美台全新特价DCX54-16即刻询购立享优惠#长期有货
DIODES
23+
SOT89-3L
39996
##公司主营品牌长期供应100%原装现货可含税提供技术
DIODES
07+
SOT-89
2000
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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