Single Phase 1.0 AMP. Glass Passivated Bridge Rectifiers

Features • Glass passivated junction • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • High temperature soldering guaranteed: 260°C / 10 seconds / 0.375” ( 9.5mm ) lead length at 5 lbs., ( 2.3 kg ) tension • Small size, simple in

DBLS105G - 二极管 桥式整流, 单相, 600 V, 1 A, SOIC, 1.1 V, 4 引脚

The DBLS105G is a 4-pin single-phase Bridge Rectifier Diode features a reliable construction utilizing moulded plastic technique. It has pure tin plated terminal, lead free, leads solderable per MIL-STD-202, Method 208. It has high surge current capability and ideal for printed circuit board. ·Glass passivated junction\n·High temperature soldering guaranteed\n·Ideal for printed circuit board\n·High surge current capability\n·420V Maximum RMS voltage\n·-55 to 150°C Operating temperature range;

BRIDGE

Bridge Rectifiers

封装/外壳：4-SMD，鸥翼 包装：散装 描述：BRIDGE RECT 1PHASE 600V 1A DBLS 分立半导体产品 二极管 - 桥式整流器

Single Phase 1.0AMP. Glass Passivated Bridge Rectifiers

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1A, 50V - 1000V Glass Passivated Bridge Rectifiers

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1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER

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Glass Passivated Bridge Rectifiers

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封装/外壳：4-SMD，鸥翼 包装：散装 描述：BRIDGE RECT 1PHASE 600V 1A DBLS 分立半导体产品 二极管 - 桥式整流器

1A, 400V - 1000V Glass Passivated Bridge Rectifiers

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HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS

Hybrid Power Module

The RF Line VHF Power Amplifier The MHW105 is designed specifically for portable radio applications. The MHW105 is capable of 5.0 watts power output, operates from a 7.5 volt supply and requires only 1.0 mW of RF input power. • Specified 7.5 Volt Characteristics: RF Input Power — 1.0 mW (0

SCHOTTKY BARRIER RECTIFIERS(1.0A,20-60V)

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

POWER TRANSISTORS(8A,60-100V,80W)

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP