Single Phase 2.0 AMPS. Glass Passivated Bridge Rectifiers

FEATURES - Ideal for automated placement - Reliable low cost construction utilizing molded plastic technique - High surge current capability - UL Recognized File # E-326854 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to I

Single Phase2.0 AMP. Glass Passivated Bridge Rectifiers

Features ◇ Glass passivated junction ◇ Ideal for printed circuit board ◇ Reliable low cost construction utilizing molded plastic technique ◇ High surge current capability ◇ High temperature soldering guaranteed: 260°C / 10 seconds at 5 lbs., ( 2.3 kg ) tension ◇ Small size, simpl

封装/外壳：4-DIP（0.300"，7.62mm） 包装：卷带（TR） 描述：DIODE BRIDGE 2A 200V DBL 分立半导体产品 二极管 - 桥式整流器

2A, 200V, Standard Bridge Rectifier

2A, 50V - 1400V Glass Passivated Bridge Rectifiers

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Glass Passivated Bridge Rectifiers

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Single Phase 2.0AMPS. Glass Passivated Bridge Rectifiers

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封装/外壳：4-DIP（0.300"，7.62mm） 包装：卷带（TR） 描述：DIODE BRIDGE 2A 200V DBL 分立半导体产品 二极管 - 桥式整流器

P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH203 is supplied in the SOT23 subminiature sur

Dual N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHN203 is supplied in the SOT96

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitances

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.