| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DB203L | 2.0 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts 文件:456.71 Kbytes Page:3 Pages | MCC | ||
DB203L | 整流桥 | MCC | ||
丝印代码:DB-LS;SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes FEATURES * Good for automation insertion * Surge overload rating - 60 amperes peak * Ideal for printed circuit board * Reliable low cost construction utilizing molded * Glass passivated device * Polarity symbols molded on body * Mounting position: Any | RECTRON 丽正 | |||
Bridge Rectifiers | WILLAS 威伦电子 | |||
P-channel enhancement mode MOS transistor GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH203 is supplied in the SOT23 subminiature sur | PHILIPS 飞利浦 | |||
Dual N-channel enhancement mode TrenchMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHN203 is supplied in the SOT96 | PHILIPS 飞利浦 | |||
TRISILTM DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE | STMICROELECTRONICS 意法半导体 | |||
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitances | POLYFET | |||
SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V) Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. | MOSPEC 统懋 |
DB203L产品属性
- 类型
描述
- VRM (V):
200
- IFSM (A):
60
- IF (A):
2.0
- VF (V):
1.1
- IFM (A):
2.0
- TRR (μs):
- IR (μA):
10
- @VR (V):
200
- Package Qty:
Tube
- FIT:
40; Tj=100℃
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
26+ |
N/A |
65000 |
一级代理-主营优势-实惠价格-不悔选择 |
DB203L规格书下载地址
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DdatasheetPDF页码索引
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