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型号 功能描述 生产厂家 企业 LOGO 操作
DB155L

1.5 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts

Features • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information) • 4-PIN DIP Package • Glass Passivated Diode Construction • High Surge Forward Current Capability • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Halogen

MCC

DB155L

整流桥

MCC

Bridge Rectifiers

RECTRON

丽正

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Amperes

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RECTRON

丽正

Low-voltage variable capacitance diode

DESCRIPTION The BB155 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 very small plastic SMD package. FEATURES • Very low capacitance spread • Excellent linearity • Low series resistance • Very small plastic SMD package. APPLICATIONS • Volta

PHILIPS

飞利浦

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

STMICROELECTRONICS

意法半导体

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

STMICROELECTRONICS

意法半导体

GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 6 mW (typ.) ● Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) ● Long lifetime, high reliability ● Thin side-view type package

PANASONIC

松下

L-BAND SPDT SWITCH

DESCRIPTION The UPG153TB and UPG155TB are L-band SPDT (Single Pole Double Throw) GaAs FET switches for digital cellular or cordless telephone application. The devices can operate from 100 MHz to 2.5 GHz with low insertion loss. These devices are housed in an original 6 pin super mini-mold package

NEC

瑞萨

DB155L产品属性

  • 类型

    描述

  • VRM (V):

     600

  • IFSM (A):

     45

  • IF (A):

     1.5

  • VF (V):

     1.1

  • IFM (A):

     1.5

  • TRR (μs):

     

  • IR (μA):

     10

  • @VR (V):

     600

  • Package Qty:

     Tube

  • FIT:

     40; Tj=100℃

更新时间:2026-7-23 15:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RECTRON
23+
SOP-4
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
26+
N/A
64000
一级代理-主营优势-实惠价格-不悔选择