N-Channel Enhancement Mode MOSFET

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=35A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.105Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

400V N-Channel MOSFET

Features • 35A, 400V, RDS(on) = 0.105 Ω @ VGS = 10 V • Low gate charge ( typical 110 nC) • Low Crss ( typical 65 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=35A@ TC=25℃ ·Drain Source Voltage -VDSS=400V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.105Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

400V N-Channel MOSFET

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