Ultra high-speed switching diode arrays

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D Subminiature Connectors

D Subminiature The ITT Cannon D Subminiature family of connectors has grown to include a wide variety of styles, options and accessories and is often the most economical solution to any interconnect problem. Ideally suited for both commercial/industrial applications and military/aerospace ap

D Subminiature Connectors

D Subminiature The ITT Cannon D Subminiature family of connectors has grown to include a wide variety of styles, options and accessories and is often the most economical solution to any interconnect problem. Ideally suited for both commercial/industrial applications and military/aerospace ap

80 V Switching Diode

The switching diode is designed for high speed switching applications. • Pb-Free Package is Available;

Silicon Switching Diode

Features • Pb−Free Package is Available

Silicon Switching Diode

Features • Pb−Free Package is Available

包装：散装 描述：CONN BACKSHELL 15POS 180DEG 5PC 连接器，互连器件 D-Sub，D 形连接器底壳，罩

Defining and Champooning Innivation

文件：2.46466 Mbytes Page：28 Pages

Defining and Champooning Innivation

文件：2.46466 Mbytes Page：28 Pages

Defining and Champooning Innivation

文件：2.46466 Mbytes Page：28 Pages

包装：散装 描述：CONN BACKSHELL 15POS 50DEG SHLD 连接器，互连器件 D-Sub，D 形连接器底壳，罩

Defining and Champooning Innivation

文件：2.46466 Mbytes Page：28 Pages

Defining and Champooning Innivation

文件：2.46466 Mbytes Page：28 Pages

Side emitter beam. Assembly with installation tape.

文件：2.30123 Mbytes Page：4 Pages

Silicon Switching Diode

文件：58 Kbytes Page：4 Pages

Silicon Switching Diode

文件：58 Kbytes Page：4 Pages

Silicon Switching Diode

文件：58 Kbytes Page：4 Pages

Recording Writer for MSSI121

Description The MSSI121/241/241B is an one time programmable CMOS VLSI ASIC that can memorize voice for 7-12 / 13-24 seconds using 6-bit MOSEL qualified coding method (MPCM). Most of the necessary circuit are built in like oscillator, ROM, DAC and interface logic. Versatile functions can be perfo

Germanium PNP Transistor Audio Frequency Power Amplifier

Description: The NTE121 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier.

POWER TRANSISTORS(5.0A,60-100V,65W)

designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board