Dual N-channel TrenchMOS transistor

GENERAL DESCRIPTION Dual N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. FEATURES • Dual device • Low on-state resistance • Fast switching • Low profile surface mount package Applications:- • Motor and relay drivers • d.c. to d.c. conver

Dual N-channel TrenchMOS standard level FET

1.1 General description Dual standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefit