For Power Amplification (50V, 3A)

2SB1566 Power Transistor(-50V, -3A) Features 1) Low saturation voltage, typically VCE(sat) = -0.3V at IC / IB = -2A / -0.2A 2) Wide SOA (safe operating area). 3) Complements the 2SD2395. 2SD2395 Power Transistor(50V, 3A) Features 1) Low saturation voltage, typically VCE(sat) = 0.2V at

Silicon NPN transistor in a TO-220F Plastic Package

NPN SILICON EPITAXIAL POWER TRANSISTOR

NPN SILICON EPITAXIAL POWER TRANSISTOR Designed For Relay drive and DC-DC Converter.

36-40GHz Low Noise Very High Gain Amplifier

Description The CHA2395 is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electr

Bandpass Filter

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9 kHz to 26.5 GHz Spectrum Analyzer

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36-40GHz Low Noise Very High Gain Amplifier

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