Single & Dual Output Miniature, 2W SIP DC/DC Converters

Single & Dual Output Miniature, 2W SIP DC/DC Converters Key Features: •2W Output Power •Miniature SIP Case •Single & Dual Outputs •1,000 VDC Isolation •>1.12 MHour MTBF •28 Standard Models •Industry Standard Pin-Out

High Power 200W reed relay with 7kV isolation

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D COMPACT ENCLOSED SWITCH

Features •High precision and long life. •Suitable for applications demanding higher mechanical strength, •Gasket diaphragm seal provides high environmental resistance.

Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 13 dB minimum;

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 50 MHz to 2 G

Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 13 dB minimum;

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 50 MHz to 1 G

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 50 MHz to 1 G

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from DC to 2

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 15W – 28V – 1GHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from DC to 2 G

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 400MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from DC to 500 MHz

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 400MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from DC to 500 MHz

Low Cost, 2W SIP Single & Dual Output DC/DC Converters

Key Features: • 2W Output Power • Miniature SIP Case • UL Approved (File E245422) • Single & Dual Outputs • 1,000 VDC Isolation • >3.5 MHour MTBF • 24 Standard Models • LOWEST COST!!

Very Low Cost, 2W SIP Dual Isolated Output DC/DC Converters

Key Features: • 2W Output Power • Miniature SIP Case • UL Approved (File E245422) • Dual Isolated Outputs • 1,000 VDC Isolation • >3.5 MHour MTBF • 12 Standard Models • Industry Standard Pin-Out • LOWEST COST!!

Low Cost, 2W SIP High Isolation DC/DC Converters

Key Features: • 2W Output Power • Miniature SIP Case • UL Approved (File E245422) • Single & Dual Outputs • 3,000 VDC Isolation • >3.5 MHour MTBF • 24 Standard Models • LOWEST COST!!

Low Cost, 4:1 Input Miniature, 2W SIP DC/DC Converters

Key Features: • 2W Output Power • 4:1 Input Voltage Range • 1,500 VDC Isolation • Short Circuit Protected • Miniature SIP Case • Single & Dual Outputs • 1.0 MH MTBF • Industry Standard Pin-Out • Low Low Cost!!

Low Cost, Miniature 2W SIP, Wide Input DC/DC Con vert ers

Key Features: • 2W Output Power • 2:1 Input Voltage Range • 1,500 VDC Isolation • Short Circuit Protected • Miniature SIP Case • Single & Dual Outputs • 1.0 MH MTBF • Industry Standard Pin-Out • Low Low Cost!!

High Isolation Miniature, 2W SIP DC/DC Converters

Key Features: • 2W Output Power • Miniature SIP Case • Single & Dual Outputs • 3,000 VDC Isolation • >1.12 MHour MTBF • 28 Standard Models • Industry Standard Pin-Out

Super Fast Recovery Rectifiers(400V 200A)

400V 200A FEATURES ● High current capacity ● trr150ns ● Insulated Package APPLICATION ●Semiconductor Production Equipment ● Big Power Supply ●Factory Automation, Robot

Miniature SIP, 2W Ultra-Wide 4:1 Input DC/DC Converters

Key Features: • 2W Output Power • 4:1 Input Voltage Range • 1,000 VDC Isolation • Short Circuit Protected • Miniature SIP Case • Single & Dual Outputs • 1.0 MH MTBF • Industry Standard Pin-Out

Miniature SIP, 2W Wide Input Range DC/DC Converters

Miniature SIP, 2W Wide Input Range DC/DC Converters Key Features: •2W Output Power •2:1 Input Voltage Range •1,000 VDC Isolation •Short Circuit Protected •Miniature SIP Case •Single & Dual Outputs •2.7 MH MTBF •Industry Standard Pin-Out

包装：瓶装 描述：TWO-PART CURABLE THERMAL GREASE, 风扇，热管理 热 - 粘合剂，环氧树脂，油脂，膏

包装：散装 描述：CUTTER SIDE OVAL BEVEL 8.06\ 工具 钢丝钳

大功率定向耦合器

Ultimate Bundle Software Package for InfiniiVision X-Series oscilloscopes

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METAL GATE RF SILICON FET

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Low Cost, 짹10 g Dual Axis Accelerometer with Digital Outputs

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Low Cost, 짹10 g Dual Axis Accelerometer with Digital Outputs

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METAL GATE RF SILICON FET

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CABLE BREAKOUT BOOT, TWO ENTRY

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METAL GATE RF SILICON FET

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METAL GATE RF SILICON FET

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METAL GATE RF SILICON FET

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METAL GATE RF SILICON FET

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TRANSISTORS TO 92L TO-92LS MRT

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ROHS COMPLIANT METAL GATE RF SILICON FET

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Optical Liquid Level Sensors

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D200ERU SERIES

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Optical Liquid Level Sensors

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Optical Liquid Level Sensors

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Ceramic Disc Capacitors Class 1 and 2, 500 VDC, General Purpose

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Super Fast Recovery Diode

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HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current ........................ 200A • VCEX Collector-emitter voltage ........... 600V • hFE DC current gain............................... 75 • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION

HIGH POWER SWITCHING USE NON-INSULATED TYPE

HIGH POWER SWITCHING USE NON-INSULATED TYPE • IC Collector current ........................ 200A • VCEX Collector-emitter voltage ........... 350V • hFE DC current gain............................. 100 • Non-Insulated Type APPLICATION Robotics, Welders, Forklifts, Golf cart

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current .......... 200A • IF (AV) Average forward current .......... 200A • VRRM Repetitive peak reverse voltage .......... 400/800/1200/1600V • VDRM Repetitive peak off-state voltage .......... 400/800/1200/1600V • MIX DOUBLE A

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current .......... 200A • VRRM Repetitive peak reverse voltage ........ 400/800/1200/1600V • VDRM Repetitive peak off-state voltage ........ 400/800/1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No.

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current .......... 200A • IF (AV) Average forward current .......... 200A • VRRM Repetitive peak reverse voltage .......... 400/800/1200/1600V • VDRM Repetitive peak off-state voltage .......... 400/800/1200/1600V • MIX DOUBLE A