METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 50 MHz to 2 G

Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 13 dB minimum;

256KB Asynchronous Secondary Cache Module for PowerPC

The MPC2001 is designed to provide asynchronous 256KB L2 cache for the PowerPC 60x processors. The module is configured as 32K x 64 bits in a 136 pin dual readout single inline memory module (DIMM). The module uses eight of Motorola’s MCM6206 CMOS RAMs. Eight write enables are provided for byte w

900 MHz DOWNCONVERTER LNA/MIXER SILICON MONOLITHIC INTEGRATED CIRCUIT

The MRFIC2001 is an integrated downconverter designed for receivers operating in the 800 MHz to 1.0 GHz frequency range. The design utilizes Motorola’s advanced MOSAIC 3 silicon bipolar RF process to yield superior performance in a cost effective monolithic device. Applications for the MRFIC2001 i

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors Designed primarily for large–signal output and driver amplifier stages in the 1.0 to 2.3 GHz frequency range. • Designed for Class B or C, Common Base Power Amplifiers • Specified 28 Volt, 2.0 GHz Characteristics: Output Power — 1.0 to 20 Watts P

High Precision, 6MHz Rail-To-Rail Output Operational Amplifier

文件：430.08 Kbytes Page：11 Pages

High Precision, 6MHz Rail-To-Rail Output Operational Amplifier

文件：430.08 Kbytes Page：11 Pages