METAL GATE RF SILICON FET

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封装/外壳：Hockey Puck 包装：散装 描述：SSR RELAY SPST-NO 2A 24-140V 继电器 固态继电器

封装/外壳：Hockey Puck 包装：散装 描述：SSR RELAY SPST-NO 2A 24-140V 继电器 固态继电器

METAL GATE RF SILICON FET

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Low noise\n• High gain - 10 dB minimum;

Ceramic Singlelayer DC Disc Capacitors For General Purpose Class 1, Class 2 and Class 3, 50 VDC, 100 VDC, 500 VDC

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固态继电器(可控硅输出)

METAL GATE RF SILICON FET

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N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

Transmissive Optical Sensor with Phototransistor Output

Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor. Features ● Compact construction ● No setting efforts ● Polyc

Battery power unit

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Battery power unit

文件：123.15 Kbytes Page：24 Pages