型号 功能描述 生产厂家 企业 LOGO 操作
D1031

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMM

SEME-LAB

D1031

SIL 2 Switch/Proximity Detector Repeater Transistor Output DIN-Rail Models D1031D, D1031Q

Features SIL 2 according to IEC 61508:2010 (Route 2H) with Tproof = 7 / 10 years (≤10 / >10 of total SIF). SC2: Systematic Capability SIL2. Input from Zone 0 (Zone 20), Division 1, installation in Zone 2, Division 2. NO/NC contact/proximity Detector Input. Four opto isolated volt

GMI

SIL 2 Switch/Proximity Detector Repeater Transistor Output DIN-Rail Models D1031D, D1031Q

Features SIL 2 according to IEC 61508:2010 (Route 2H) with Tproof = 7 / 10 years (≤10 / >10 of total SIF). SC2: Systematic Capability SIL2. Input from Zone 0 (Zone 20), Division 1, installation in Zone 2, Division 2. NO/NC contact/proximity Detector Input. Four opto isolated volt

GMI

SIL 2 Switch/Proximity Detector Repeater Transistor Output DIN-Rail Models D1031D, D1031Q

Features SIL 2 according to IEC 61508:2010 (Route 2H) with Tproof = 7 / 10 years (≤10 / >10 of total SIF). SC2: Systematic Capability SIL2. Input from Zone 0 (Zone 20), Division 1, installation in Zone 2, Division 2. NO/NC contact/proximity Detector Input. Four opto isolated volt

GMI

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMM

SEME-LAB

Fast Hard Drive Diod e

文件:253.56 Kbytes Page:10 Pages

eupec

Full blocking capability 50/60Hz over a wide temperature range

文件:357.7 Kbytes Page:11 Pages

Infineon

英飞凌

Fast Hard Drive Diod e

Infineon

英飞凌

二极管盘

Infineon

英飞凌

封装/外壳:DO-200AD 包装:卷带(TR) 描述:DIODE GEN PURP 4.5KV 1450A 分立半导体产品 二极管 - 整流器 - 单

Infineon

英飞凌

Gold metallised multi-purpose silicon DMOS RF FET

TTELEC

Heyco-Flex™Mounting Brackets

文件:102.49 Kbytes Page:1 Pages

Heyco

Heyco-Flex?줞ounting Brackets

文件:103.47 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Non-Relampable Neon Indicator Lights

文件:64.16 Kbytes Page:1 Pages

VCC

Non-Relampable Neon Indicator Lights

文件:64.16 Kbytes Page:1 Pages

VCC

10 TO 1000 MHz CASCADABLE AMPLIFIER

文件:115.99 Kbytes Page:1 Pages

MACOM

D1031产品属性

  • 类型

    描述

  • 型号

    D1031

  • 制造商

    SEME-LAB

  • 制造商全称

    Seme LAB

  • 功能描述

    METAL GATE RF SILICON FET

更新时间:2025-11-20 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
24+
BGD10026K1
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
INFINEON
23+
2300A,4500V
20000
全新原装假一赔十
Infineon/英飞凌
23+
BG-D10026K-1
12700
买原装认准中赛美
Infineon/英飞凌
2021+
BG-D10026K-1
9600
原装现货,欢迎询价
Infineon/英飞凌
21+
BG-D10026K-1
6820
只做原装,质量保证
SEME-LAB
23+
高频管
1080
专营高频管模块,全新原装!
AIROHA
23+
100000
原厂授权一级代理,专业海外优势订货,价格优势、品种
SK
TO-220
56520
一级代理 原装正品假一罚十价格优势长期供货
Infineon/英飞凌
24+
BG-D10026K-1
25000
原装正品,假一赔十!
EPCOS/爱普科斯
25+
SMD
15000
全新原装现货,价格优势

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