METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMM

Gold metallised multi-purpose silicon DMOS RF FET

UHF POWER TRANSISTOR

The RF Line UHF Power Transistor . . . designed primarily for wideband, large–signal output and driver amplifier stages to 1.0 GHz. • Designed for Class A Linear Power Amplifiers • Specified 25 Volt, 900 MHz Characteristics: Output Power — 3.0 Watts Power Gain — 7.5 dB Min, Class AB •

LINEAR BUILDING BLOCK - LOW POWER COMPARATOR AND VOLTAGE REFERENCE

GENERAL DESCRIPTION The TC1031 is a low power, complimentary output comparator plus voltage reference designed specifically for low power applications. The TC1031 is designed for operation from a single supply, however, operation from dual supplies is also possible, and the power supply current

LINEAR BUILDING BLOCK - LOW POWER COMPARATOR AND VOLTAGE REFERENCE

GENERAL DESCRIPTION The TC1031 is a low power, complimentary output comparator plus voltage reference designed specifically for low power applications. The TC1031 is designed for operation from a single supply, however, operation from dual supplies is also possible, and the power supply current

2.7 V . 5.5 V, 10-BIT, 30 MSPS CMOS ANALOG-TO-DIGITAL CONVERTER

文件：358.5 Kbytes Page：26 Pages

2.7 V . 5.5 V, 10-BIT, 30 MSPS CMOS ANALOG-TO-DIGITAL CONVERTER

文件：358.5 Kbytes Page：26 Pages