DESCRIPTION

NECs NE34018 is a low cost gallium arsenide Hetero-Junction FET housed in a miniature (SOT-343) plastic surface mount package. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. Its low noise figure, high gain, small size and weight make it an ideal low noise amplifier transistor in the 1- 3 GHz frequency range. The NE34018 is suitable for GPS, PCS, WLAN, MMDS, and other commercial applications.

NECs stringent quality assurance and test procedures ensure the highest reliability and performance.

FEATURES

• LOW COST MINIATURE PLASTIC PACKAGE (SOT-343)

• LOW NOISE FIGURE: 0.6 dB typical at 2 GHz

• HIGH ASSOCIATED GAIN: 16.0 dB typical at 2 GHz

• LG = 0.6 µm, WG = 400 µm

• TAPE & REEL PACKAGING