2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2955 and CZT3055 types are surface mount epoxy molded complementary silicon transistors manufactured by the epitaxial base process, designed for surface mounted power amplifier applications up to 6.0 amps. MARKING CODE: FULL PART NUMBER

2.0W Surface Mount Complementary NPN Silicon Power Transistor

Features ● High current (max. 6A). ● Low voltage (max. 60V).

High Current

TRANSISTOR (NPN) FEATURES ● High Current ● Low Voltage ● Complement to CZT2955 ● Surface Mounted Power Amplifier Application

SOT-223 Plastic-Encapsulate Transistors

FEATURES High Current Low Voltage Complement to CZT2955 Surface Mounted Power Amplifier Application

普通三极管

SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS

文件：604.22 Kbytes Page：2 Pages

SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS

文件：604.22 Kbytes Page：2 Pages

SOT-223 Plastic-Encapsulate Transistors

FEATURES High Current Low Voltage Complement to CZT2955 Surface Mounted Power Amplifier Application

2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2955 and CZT3055 types are surface mount epoxy molded complementary silicon transistors manufactured by the epitaxial base process, designed for surface mounted power amplifier applications up to 6.0 amps. MARKING CODE: FULL PART NUMBER

包装：散装 描述：TRANS NPN/AMPLIFIER SWITCH 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

包装：散装 描述：TRANS NPN/AMPLIFIER SWITCH 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Transistors

文件：344.91 Kbytes Page：1 Pages

NPN - Power Transistor Die 6.0 Amp, 100 Volt

文件：689.51 Kbytes Page：5 Pages

NPN - Power Transistor Die 6.0 Amp, 100 Volt

文件：689.51 Kbytes Page：5 Pages

POWER TRANSISTORS(10A,60V,75W)

COMPLEMENTARY SILICON POWER TRANSISTORS.

MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS

N–Channel Enhancement Mode Silicon Gate TMOS E–FET™ SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.15 OHM TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles t

POWER TRANSISTORS COMPLEMENTARY SILICON

TIP2955 PNP TIP3055 NPN 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 90 WATTS . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20–70 @ IC = 4.0 Adc • Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @

POWER TRANSISTORS(15A,60V,90W)

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 90 WATTS designed for use int general-purpose amplifier and switching application NPN -> TIP3055 PNP -> TIP2955