200-MHz 24-Output Buffer for 4 DDR or 3 SDRAM DIMMS

文件：255.89 Kbytes Page：10 Pages

200 MHz 24-Output Buffer for 4 DDR or 3 SDRAM DIMMS

文件：195.98 Kbytes Page：9 Pages

200 MHz 24-Output Buffer for 4 DDR or 3 SDRAM DIMMS

文件：135.15 Kbytes Page：9 Pages

封装/外壳：48-BSSOP（0.295"，7.50mm 宽） 包装：管件 描述：IC CLK BUFFER 1:24 200MHZ 48SSOP 集成电路（IC） 时钟缓冲器，驱动器

200-MHz 24-Output Buffer for 4 DDR or 3 SDRAM DIMMS

封装/外壳：48-BSSOP（0.295"，7.50mm 宽） 包装：管件 描述：IC CLK BUFFER 1:24 200MHZ 48SSOP 集成电路（IC） 时钟缓冲器，驱动器

200 MHz 24-Output Buffer for 4 DDR or 3 SDRAM DIMMS

文件：195.98 Kbytes Page：9 Pages

200 MHz 24-Output Buffer for 4 DDR or 3 SDRAM DIMMS

文件：135.15 Kbytes Page：9 Pages

200-MHz 24-Output Buffer for 4 DDR or 3 SDRAM DIMMS

文件：255.89 Kbytes Page：10 Pages

PNP video transistors

DESCRIPTION PNP video transistor in a SOT128B (TO-202) plastic package. NPN complements: BFQ235 and BFQ235A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability.

MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes)

FEATURES ● Exce High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95 ¢J with no thermal runaway ● eds environmental standards o

N-CHANNEL BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 54 MHz. The high gain, broadband performance and linear characterization of this device makes it ideal for large–signal, common source a

RF Power Field-Effect Transistor

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode

Silicon NPN Transistor Horizontal Driver, Amp

文件：20.08 Kbytes Page：2 Pages