256 Kb (64K x 4) Static RAM

General Description1 The CY7C194B-CY7C195B is a high-performance CMOS Asynchronous SRAM organized as 64K × 4 bits that supports an asynchronous memory interface. The device features an automatic power-down feature that significantly reduces power consumption when deselected. Output enable (OE) is

256 Kb (64K x 4) Static RAM

General Description1 The CY7C194B-CY7C195B is a high-performance CMOS Asynchronous SRAM organized as 64K × 4 bits that supports an asynchronous memory interface. The device features an automatic power-down feature that significantly reduces power consumption when deselected. Output enable (OE) is

256 Kb (64K x 4) Static RAM

General Description1 The CY7C194B-CY7C195B is a high-performance CMOS Asynchronous SRAM organized as 64K × 4 bits that supports an asynchronous memory interface. The device features an automatic power-down feature that significantly reduces power consumption when deselected. Output enable (OE) is

256 Kb (64K x 4) Static RAM

General Description1 The CY7C194B-CY7C195B is a high-performance CMOS Asynchronous SRAM organized as 64K × 4 bits that supports an asynchronous memory interface. The device features an automatic power-down feature that significantly reduces power consumption when deselected. Output enable (OE) is

256 Kb (64K x 4) Static RAM

General Description [1] The CY7C194BN is a high-performance CMOS Asynchronous SRAM organized as 64K × 4 bits that supports an asynchronous memory interface. The device features an automatic power-down feature that significantly reduces power consumption when deselected. See the Truth Table in th

256 Kb (64K x 4) Static RAM

General Description [1] The CY7C194BN is a high-performance CMOS Asynchronous SRAM organized as 64K × 4 bits that supports an asynchronous memory interface. The device features an automatic power-down feature that significantly reduces power consumption when deselected. See the Truth Table in th

256 Kb (64K x 4) Static RAM

General Description [1] The CY7C194BN is a high-performance CMOS Asynchronous SRAM organized as 64K × 4 bits that supports an asynchronous memory interface. The device features an automatic power-down feature that significantly reduces power consumption when deselected. See the Truth Table in th

256 Kb (64K x 4) Static RAM

General Description [1] The CY7C194BN is a high-performance CMOS Asynchronous SRAM organized as 64K × 4 bits that supports an asynchronous memory interface. The device features an automatic power-down feature that significantly reduces power consumption when deselected. See the Truth Table in th

256 Kb (64 K 횞 4) Static RAM Wide voltage range: 5.0 V 짹 10 (4.5 V to 5.5 V)

文件：460.33 Kbytes Page：15 Pages

256 Kb (64K x 4) Static RAM

256 Kb (64 K 횞 4) Static RAM Wide voltage range: 5.0 V 짹 10 (4.5 V to 5.5 V)

文件：460.33 Kbytes Page：15 Pages

256 Kb (64 K 횞 4) Static RAM Wide voltage range: 5.0 V 짹 10 (4.5 V to 5.5 V)

文件：460.33 Kbytes Page：15 Pages

封装/外壳：24-DIP（0.300"，7.62mm） 包装：托盘 描述：IC SRAM 256KBIT PARALLEL 24DIP 集成电路（IC） 存储器

封装/外壳：24-BSOJ（0.300"，7.62mm 宽） 包装：托盘 描述：IC SRAM 256KBIT PARALLEL 24SOJ 集成电路（IC） 存储器

256 Kb (64 K 횞 4) Static RAM Wide voltage range: 5.0 V 짹 10 (4.5 V to 5.5 V)

文件：460.33 Kbytes Page：15 Pages

64K x 4 Static RAM

文件：228.47 Kbytes Page：12 Pages